IGBT Module Infineon FZ2400R12KF4
Only 2 left- Code
- WS3356
- GTIN
- 4251210402436
- Category
- Module
- Dispatch
- Within 1 business day for in-stock items.
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- Dispatch within 1 business day
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Main item details
- Brand
- Infineon
- SKU / Internal code
- WS3356
- GTIN
- 4251210402436
- Product type
- Module
- Condition
- Condition shown in specs
- Stock
- Only 2 left
- Brand
- Infineon
- Model
- FZ2400R12KF4
- Fast Switching
- IGBTs have fast switching capability, allowing efficient control of electrical current in a circuit.
- Power Control
- They are designed to control power in electronic systems, allowing the variation of voltage or current in electrical loads.
- Isolation
- The control part of the IGBT is electrically isolated from the power part, which increases safety and allows use in high-voltage systems.
- High Voltage and Current
- IGBT modules are capable of handling high voltages and currents, making them suitable for considerable power applications.
- Product Category
- IGBT Modules
- RoHS
- N
- Product
- Silicon IGBT Modules
- Configuration
- Common Gate Triple Common Emitter
- Emitter-Gate Leakage Current
- 400 nA
- Pd - Power Dissipation
- 10 kW
- Package/Case
- IHM190
- Date
- 20/02/2024
- Weight
- 2.1 kg
- Measurements
- 5x16x20
- Locator
- A1P2B
About this item
Infineon FZ2400R12KF4 IGBT Module
New product out of manufacturer's box
Brand: Infineon
Model: FZ2400R12KF4
An IGBT (Insulated Gate Bipolar Transistor) module is a semiconductor device that combines the characteristics of a bipolar junction transistor (BJT) with the advantages of an insulated gate transistor (IGT). This module is widely used in power systems for energy control, energy conversion, and power electronics applications.
Fast Switching: IGBTs have fast switching capability, allowing efficient control of electrical current in a circuit.
Power Control: They are designed to control power in electronic systems, allowing the variation of voltage or current in electrical loads.
Isolation: The control part of the IGBT is electrically isolated from the power part, which increases safety and allows use in high-voltage systems.
High Voltage and Current: IGBT modules are capable of handling high voltages and currents, making them suitable for considerable power applications.
These modules are fundamental in power control systems in industrial and commercial applications, where efficiency, precise power control, and the ability to handle variable loads are crucial.
Product Category: IGBT Modules
Product: Silicon IGBT Modules
Configuration: Common Gate Triple Common Emitter
Collector-Emitter Voltage VCEO max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 2.4 kA
Emitter-Gate Leakage Current: 400 nA
Pd - Power Dissipation: 10 kW
Package/Case: IHM190
Date: 20/02/2024
Measurements: 5x16x20
Dear customers, if the material is intended for resale, the ST (Tax Substitution) value may apply.
If the operation is subject to this tax, the responsibility for payment is exclusively the buyer's.
Cabo Eletro Comercial LTDA thanks you.
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Infineon FZ2400R12KF4 IGBT Module
New product out of manufacturer's box
Brand: Infineon
Model: FZ2400R12KF4
An IGBT (Insulated Gate Bipolar Transistor) module is a semiconductor device that combines the characteristics of a bipolar junction transistor (BJT) with the advantages of an insulated gate transistor (IGT). This module is widely used in power systems for energy control, energy conversion, and power electronics applications.
Fast Switching: IGBTs have fast switching capability, allowing efficient control of electrical current in a circuit.
Power Control: They are designed to control power in electronic systems, allowing the variation of voltage or current in electrical loads.
Isolation: The control part of the IGBT is electrically isolated from the power part, which increases safety and allows use in high-voltage systems.
High Voltage and Current: IGBT modules are capable of handling high voltages and currents, making them suitable for considerable power applications.
These modules are fundamental in power control systems in industrial and commercial applications, where efficiency, precise power control, and the ability to handle variable loads are crucial.
Product Category: IGBT Modules
RoHS:N
Product: Silicon IGBT Modules
Configuration: Common Gate Triple Common Emitter
Collector-Emitter Voltage VCEO max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 2.4 kA
Emitter-Gate Leakage Current: 400 nA
Pd - Power Dissipation: 10 kW
Package/Case: IHM190
Date: 20/02/2024
Weight: 2.100
Measurements: 5x16x20
Locator: A1P2B
Dear customers, if the material is intended for resale, the ST (Tax Substitution) value may apply.
If the operation is subject to this tax, the responsibility for payment is exclusively the buyer's.
Cabo Eletro Comercial LTDA thanks you.
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